Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Y. Fu; F. Yun; Y. T. Moon; Ü Özgür; J. Q. Xie; X. F. Ni; N. Biyikli; H. Morkoç; Lin Zhou; David Smith; C. K. Inoki; T. S. Kuan

doi:10.1063/1.2170422

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

Y. Fu, F. Yun, Y. T. Moon, Ü Özgür, J. Q. Xie, X. F. Ni, N. Biyikli, H. Morkoç, Lin Zhou, David Smith, C. K. Inoki, T. S. Kuan

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Abstract

We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.

Original language	English (US)
Article number	033518
Journal	Journal of Applied Physics
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.2170422
State	Published - Feb 1 2006

ASJC Scopus subject areas

Physics and Astronomy(all)

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@article{52620199ee7644fa91fd4ed34c677136,

title = "Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy",

abstract = "We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.",

author = "Y. Fu and F. Yun and Moon, {Y. T.} and {\"U} {\"O}zg{\"u}r and Xie, {J. Q.} and Ni, {X. F.} and N. Biyikli and H. Morko{\c c} and Lin Zhou and David Smith and Inoki, {C. K.} and Kuan, {T. S.}",

note = "Funding Information: The work at Virginia Commonwealth University and University at Albany, State University of New York, is funded by ONR as part of a Defense University Research Initiative on Nanotechnology (DURINT) program, monitored by Dr. C. E. C. Wood, and the work at ASU was partially supported by the Office of Naval Research under Grant No. N-00014-04-1-0020. The authors thank Professor R. M. Feenstra (Carnegie Mellon University), Professor A. A. Baski (Virginia Commonwealth University), and Professor D. Johnstone (Virginia Commonwealth University) for helpful discussions, and the use of TEM facilities at Arizona State University is acknowledged.",

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T1 - Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

AU - Fu, Y.

AU - Yun, F.

AU - Moon, Y. T.

AU - Özgür, Ü

AU - Xie, J. Q.

AU - Ni, X. F.

AU - Biyikli, N.

AU - Morkoç, H.

AU - Zhou, Lin

AU - Smith, David

AU - Inoki, C. K.

AU - Kuan, T. S.

N1 - Funding Information: The work at Virginia Commonwealth University and University at Albany, State University of New York, is funded by ONR as part of a Defense University Research Initiative on Nanotechnology (DURINT) program, monitored by Dr. C. E. C. Wood, and the work at ASU was partially supported by the Office of Naval Research under Grant No. N-00014-04-1-0020. The authors thank Professor R. M. Feenstra (Carnegie Mellon University), Professor A. A. Baski (Virginia Commonwealth University), and Professor D. Johnstone (Virginia Commonwealth University) for helpful discussions, and the use of TEM facilities at Arizona State University is acknowledged.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.

AB - We report on the effectiveness of porous TiN nanonetworks on the reduction of threading dislocations (TDs) in GaN grown by metal-organic vapor-phase epitaxy (MOVPE). The porous TiN networks were formed by in situ annealing of thin-deposited Ti films deposited ex situ on GaN templates within the MOVPE growth chamber. Different annealing parameters in relation to surface porosity of TiN networks were investigated. Transmission electron micrographs indicated dislocation reduction by factors of up to 10 in GaN layers grown on the TiN nanonetwork, compared with a control sample. TiN prevented many dislocations present in the GaN templates from penetrating into the upper layer. Microscale epitaxial lateral overgrowth of GaN above TiN also contributed to TD reduction. The surface porosity of the TiN network had a strong impact on the efficiency of TD reduction. X-ray-diffraction and time-resolved photoluminescence measurements further confirmed the improved GaN quality.

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Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

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