Dislocation kink motion in silicon

Y. M. Huang, John Spence, O. F. Sankey

Research output: Contribution to journalArticlepeer-review

63 Scopus citations


Ductility is controlled at the atomic level by dislocation kink motion. The migration energy for kinks on the 30°partial dislocation in silicon has been computed ab initio in agreement with experiment. The electronic structure changes from semiconducting to metallic at the saddle-point configuration. Band structure energy controls kink motion, so valence electrons control shearing motions involved with ductility, whereas tensile forces involved in fracture depend on both ion-ion and valence forces. Doping effects on dislocation mobility are explained.

Original languageEnglish (US)
Pages (from-to)3392-3395
Number of pages4
JournalPhysical Review Letters
Issue number17
StatePublished - 1995

ASJC Scopus subject areas

  • General Physics and Astronomy


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