Direct absorption edge in GeSiSn alloys

V. R. D'Costa, Y. Y. Fang, J. Tolle, John Kouvetakis, Jose Menendez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations


The lowest direct absorption edge E0 in ternary Ge 1-x-ySixSny alloys was measured in films grown lattice-matched to Ge using spectroscopic ellipsometry and photoreflectance. The sample choice is dictated by possible applications of Ge1-x-ySi xSny in photovoltaics as the long-sought ∼1 eV gap material to complement Ge/InGaAs/InGaP multijunctions. The compositional dependence of the E0 transition is analyzed in detail.

Original languageEnglish (US)
Title of host publicationPhysics of Semiconductors - 29th International Conference, ICPS 29
Number of pages2
StatePublished - 2009
Event29th International Conference on Physics of Semiconductors, ICPS 29 - Rio de Janeiro, Brazil
Duration: Jul 27 2008Aug 1 2008

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Other29th International Conference on Physics of Semiconductors, ICPS 29
CityRio de Janeiro


  • Optical properties
  • Semiconductors

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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