Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells

Srinath Murali; Abhinav Chikhalkar; Chaomin Zhang; Richard R. King; Christiana B. Honsberg

doi:10.1109/PVSC45281.2020.9300955

Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells

Srinath Murali, Abhinav Chikhalkar, Chaomin Zhang, Richard R. King, Christiana B. Honsberg

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.

Original language	English (US)
Title of host publication	2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	2017-2020
Number of pages	4
ISBN (Electronic)	9781728161150
DOIs	https://doi.org/10.1109/PVSC45281.2020.9300955
State	Published - Jun 14 2020
Event	47th IEEE Photovoltaic Specialists Conference, PVSC 2020 - Calgary, Canada Duration: Jun 15 2020 → Aug 21 2020

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2020-June
ISSN (Print)	0160-8371

Conference

Conference	47th IEEE Photovoltaic Specialists Conference, PVSC 2020
Country/Territory	Canada
City	Calgary
Period	6/15/20 → 8/21/20

Keywords

dilute nitride
molecular beam epitaxy
multijunction solar cell

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/PVSC45281.2020.9300955

Cite this

Murali, S., Chikhalkar, A., Zhang, C., King, R. R., & Honsberg, C. B. (2020). Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells. In 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020 (pp. 2017-2020). Article 9300955 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2020-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC45281.2020.9300955

Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells. / Murali, Srinath; Chikhalkar, Abhinav; Zhang, Chaomin et al.
2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 2017-2020 9300955 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2020-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Murali, S, Chikhalkar, A, Zhang, C, King, RR & Honsberg, CB 2020, Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells. in 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020., 9300955, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2020-June, Institute of Electrical and Electronics Engineers Inc., pp. 2017-2020, 47th IEEE Photovoltaic Specialists Conference, PVSC 2020, Calgary, Canada, 6/15/20. https://doi.org/10.1109/PVSC45281.2020.9300955

Murali S, Chikhalkar A, Zhang C, King RR , Honsberg CB. Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells. In 2020 47th IEEE Photovoltaic Specialists Conference, PVSC 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 2017-2020. 9300955. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC45281.2020.9300955

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abstract = "This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.",

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AB - This work reports on the growth of dilute nitride GaPNx lattice-matched to Si as a pathway for Si-based multijunction solar cells. GaPNx layers were grown using a plasma assisted molecular beam epitaxy with varying N concentrations. High resolution X-Ray ray diffraction analysis revealed high structural quality of the grown thin-film layers including the successful integration of GaPNx with a GaP buffer layer on Si substrate. Low temperature photoluminescence spectroscopy results showed the peak position to be around 1.94eV at 100K for the lattice-matched case. This value is close to the ideal bandgap for independent connection with Si bottom cell in a tandem configuration.

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Dilute nitride GaPNxas potential top cell candidate for Silicon based multijunction solar cells

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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