Diamond Schottky p-i-n diodes for high power RF receiver protectors

Vishal Jha; Harshad Surdi; Mohammad Faizan Ahmad; Franz Koeck; Robert J. Nemanich; Stephen Goodnick; Trevor J. Thornton

doi:10.1016/j.sse.2021.108154

Diamond Schottky p-i-n diodes for high power RF receiver protectors

Vishal Jha, Harshad Surdi, Mohammad Faizan Ahmad, Franz Koeck, Robert J. Nemanich, Stephen Goodnick, Trevor J. Thornton

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.

Original language	English (US)
Article number	108154
Journal	Solid-State Electronics
Volume	186
DOIs	https://doi.org/10.1016/j.sse.2021.108154
State	Published - Dec 2021

Keywords

Compact models
Diamond
Power electronics
Receiver protectors
Schottky diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.sse.2021.108154

Cite this

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title = "Diamond Schottky p-i-n diodes for high power RF receiver protectors",

abstract = "The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.",

keywords = "Compact models, Diamond, Power electronics, Receiver protectors, Schottky diodes",

author = "Vishal Jha and Harshad Surdi and {Faizan Ahmad}, Mohammad and Franz Koeck and Nemanich, {Robert J.} and Stephen Goodnick and Thornton, {Trevor J.}",

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year = "2021",

month = dec,

doi = "10.1016/j.sse.2021.108154",

language = "English (US)",

volume = "186",

journal = "Solid-State Electronics",

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TY - JOUR

T1 - Diamond Schottky p-i-n diodes for high power RF receiver protectors

AU - Jha, Vishal

AU - Surdi, Harshad

AU - Faizan Ahmad, Mohammad

AU - Koeck, Franz

AU - Nemanich, Robert J.

AU - Goodnick, Stephen

AU - Thornton, Trevor J.

PY - 2021/12

Y1 - 2021/12

N2 - The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.

AB - The electrical characteristics of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition have been measured from DC to 25 GHz and used to extract the small-signal parameters for a lumped-element compact model. The model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage behavior, as well as the insertion and reflection loss. The high thermal conductivity of diamond makes the diodes ideally suited for high power radar receiver protector applications. We demonstrate that under forward bias a single diode can provide 14 dB of input power attenuation. For self-biased limiter applications, a two-stage circuit with back-to-back diodes has been simulated using the diode model to show > 20 dB of attenuation at an input power of 50 dBm.

KW - Compact models

KW - Diamond

KW - Power electronics

KW - Receiver protectors

KW - Schottky diodes

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JO - Solid-State Electronics

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Diamond Schottky p-i-n diodes for high power RF receiver protectors

Abstract

Keywords

ASJC Scopus subject areas

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