TY - GEN
T1 - Diamond Schottky p-i-n Diodes
T2 - 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
AU - Jha, Vishal
AU - Surdi, Harshad
AU - Koeck, Franz
AU - Nemanich, Robert J.
AU - Goodnick, Stephen M.
AU - Thornton, Trevor J.
N1 - Funding Information:
This work was supported in part by funding from the NASA HOTTech Program, grant NNX17AG45G. Fabrication of the diamond diodes was completed in the ASU NanoFab with support from NSF program NNCI-ECCS-2025490
Funding Information:
ACKNOWLEDGMENT This work was supported in part by funding from the NASA HOTTech Program, grant NNX17AG45G. Fabrication of the diamond diodes was completed in the ASU NanoFab with support from NSF program NNCI-ECCS-2025490.
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - The paper features the fabrication, characterization, and modeling of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition. The electrical measurements are used to extract the parameters for a unified lumped-element SPICE model. The sub-circuit model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage and S-parameter measurements, as well as the large-signal, non-linear properties of the diodes. An early insertion point for diamond electronics will be high power RF passive systems such as receiver protectors and mixers. We validate the model by comparing it to the measured non-linearities produced by the diode in a single-ended unbalanced RF mixer configuration.
AB - The paper features the fabrication, characterization, and modeling of diamond Schottky p-i-n diodes grown by plasma enhanced chemical vapor deposition. The electrical measurements are used to extract the parameters for a unified lumped-element SPICE model. The sub-circuit model accurately reproduces the forward and reverse bias DC characteristics, the capacitance-voltage and S-parameter measurements, as well as the large-signal, non-linear properties of the diodes. An early insertion point for diamond electronics will be high power RF passive systems such as receiver protectors and mixers. We validate the model by comparing it to the measured non-linearities produced by the diode in a single-ended unbalanced RF mixer configuration.
KW - diamond
KW - p-i-n diodes
KW - SPICE
KW - Wide band gap semiconductors
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U2 - 10.1109/IMS37962.2022.9865649
DO - 10.1109/IMS37962.2022.9865649
M3 - Conference contribution
AN - SCOPUS:85138002749
T3 - IEEE MTT-S International Microwave Symposium Digest
SP - 918
EP - 921
BT - 2022 IEEE/MTT-S International Microwave Symposium, IMS 2022
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 19 June 2022 through 24 June 2022
ER -