The results of experiments and computer simulation data are presented for a quantum-well heterostructure FET that is undoped (except for a thin layer beneath the well) and is fabricated in an ion-implanted self-aligned geometry. Key aspects of the physics of this device, which relate to channel access, charge control, and deep-level trapping, are described. The quantum-well metal insulator inverted-interface semiconductor FET (self-aligned QW-MI**3SFETs) possess lower gate leakage than other heterostructure FETs (HFETs), lower access resistance than recessed-gate QW-MI**3SFET designs, lower output conductance than single-interface HFETs, and considerably lower 77 K trapping effects than in conventional MODFETs. The characteristics of the QW-MI**3SFET are influenced by compositional disordering, interchannel gating, carrier confinement, and charge screening within the structure.
|Original language||English (US)|
|Title of host publication||Technical Digest - International Electron Devices Meeting|
|Number of pages||4|
|State||Published - 1987|
ASJC Scopus subject areas
- Electrical and Electronic Engineering