TY - GEN
T1 - Development of a high-band gap high temperature III-nitride solar cell for integration with concentrated solar power technology
AU - Williams, Joshua J.
AU - McFavilen, Heather
AU - Fischer, Alec M.
AU - Ding, Ding
AU - Young, Steven R.
AU - Vadiee, Ehsan
AU - Ponce, Fernando
AU - Arena, Chantal
AU - Honsberg, Christiana
AU - Goodnick, Stephen
N1 - Funding Information:
The information, data, and work presented here was funded in part by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DE-AR0000470.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
AB - The III-N material class of semiconductors exhibits desirable properties for construction of a cell for integration with the thermal receiver of a concentrated solar plant. We design a GaN-InGaN based solar cell for operation at 450 °C. An MQW structure for the InGaN absorber is selected to improve voltage through improved material quality. Cell performance shows a VOC of 2.4 V for room temperature and 1.7 V at operating temperature and 300× suns. EQE measurements show little cell performance decrease up to 500 °C. Repeated measurements indicate the device to be thermally robust.
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U2 - 10.1109/PVSC.2017.8366449
DO - 10.1109/PVSC.2017.8366449
M3 - Conference contribution
AN - SCOPUS:85048472189
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 604
EP - 607
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Y2 - 25 June 2017 through 30 June 2017
ER -