Determination of polarization-fields across polytype interfaces in InAs nanopillars

Luying Li, Zhaofeng Gan, Martha McCartney, Hanshuang Liang, Hongbin Yu, Wan Jian Yin, Yanfa Yan, Yihua Gao, Jianbo Wang, David Smith

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Polarization fields within InAs nanopillars with zincblende(ZB)/ wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.

Original languageEnglish (US)
Pages (from-to)1052-1057
Number of pages6
JournalAdvanced Materials
Issue number7
StatePublished - Feb 19 2014


  • InAs
  • nanopillars
  • off-axis electron holography
  • polytype heterocrystalline structures
  • probe-corrected HAADF imaging
  • spontaneous polarization

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering


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