Determination of electronic band structure by electron holography of etched-and-regrown interfaces in GaN p-i-n diodes

Keyphrases

• PIN Diode 100%
• Electron Holography 100%
• Banded Structure 100%
• Potential Profile 75%
• Undoped 50%
• Diode 50%
• GaN Surface 50%
• Mg-doped GaN 50%
• P-n Junction 25%
• Transmission Electron Microscope 25%
• Impurities 25%
• Secondary Ion Mass Spectrometry 25%
• Regrowth Interface 25%
• Composition Profile 25%
• Highly Doped 25%
• MG-Si 25%
• Electrostatic Potential 25%
• Potential Variation 25%
• Electronic Charge 25%
• Reverse Leakage Current 25%
• Power Electronics 25%

Physics

• Holography 100%
• Electron Microscope 50%
• Electrostatics 50%
• Mass Spectroscopy 50%
• Regrowth 50%
• Power Electronics 50%

Material Science

• Secondary Ion Mass Spectrometry 100%
• Electronic Band Structure 100%