@inproceedings{4535a8b78de3442e96d3cd967893b5fa,
title = "Design guidelines of current source gate driver for series connected SiC MOSFETs",
abstract = "The series connection of low voltage devices is one option of forming a device with higher voltage rating. The biggest challenge of series connected devices is drain-source voltage unequal sharing caused by differences among each device. A current source gate driver for series connected SiC MOSFETs is demonstrated in previous work. The proposed current source gate driver can generate highly synchronized gate voltages because of its constant gate current and novel gate driver structure. But in previous work, the design considerations are not explained in detail. This paper will provide detailed design guidelines of each stage in terms of control strategy and hardware.",
keywords = "current source gate driver, series connection, SiC MOSFET",
author = "Chunhui Liu and Zhengda Zhang and Yifu Liu and Yunpeng Si and Mengzhi Wang and Qin Lei",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE. Copyright: Copyright 2020 Elsevier B.V., All rights reserved.; 12th Annual IEEE Energy Conversion Congress and Exposition, ECCE 2020 ; Conference date: 11-10-2020 Through 15-10-2020",
year = "2020",
month = oct,
day = "11",
doi = "10.1109/ECCE44975.2020.9236282",
language = "English (US)",
series = "ECCE 2020 - IEEE Energy Conversion Congress and Exposition",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "3803--3810",
booktitle = "ECCE 2020 - IEEE Energy Conversion Congress and Exposition",
}