@article{c3586210bdd8421cac90580b0346b829,
title = "Demonstration of GaN-based metal-insulator-semiconductor junction by hydrogen plasma treatment",
abstract = "We demonstrate a nickel/insulating-GaN (i-GaN)/p-type GaN junction and investigate its electrical properties. The i-GaN is formed by exposure to a low-power hydrogen plasma to passivate the p-GaN layer. Cathodoluminescence spectroscopy of the i-GaN is used to understand the passivation effect of the hydrogen plasma on p-GaN. The junction shows very low leakage (<10-9 A at -50 V), excellent rectifying properties (∼107), high temperature stability, and blue light electroluminescence at forward bias. A bandgap model is proposed to illustrate the electrical properties of hydrogenated p-GaN and to understand the device characteristics. ",
author = "Chen Yang and Houqiang Fu and Su, {Po Yi} and Hanxiao Liu and Kai Fu and Xuanqi Huang and Yang, {Tsung Han} and Hong Chen and Jingan Zhou and Xuguang Deng and Jossue Montes and Xin Qi and Ponce, {Fernando A.} and Yuji Zhao",
note = "Funding Information: This work was supported by the ARPA-E PNDIODES Program monitored by Dr. Isik Kizilyalli and partially supported by the NASA HOTTech Program Grant No. 80NSSC17K0768. The device fabrication was performed at the Center for Solid State Electronics Research at Arizona State University. Access to the NanoFab was supported, in part, by NSF Contract No. ECCS-1542160. Publisher Copyright: {\textcopyright} 2020 Author(s).",
year = "2020",
month = aug,
day = "3",
doi = "10.1063/5.0018473",
language = "English (US)",
volume = "117",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",
}