Abstract
Diamond is considered to be the ultimate semiconductor for power devices due to its high breakdown electric field, high carrier mobility, and superior thermal properties. The success of diamond-based electronic devices has been difficult due to critical challenges involved with poor doping efficiency and achievement of ohmic contacts. Achieving n-type diamond has proved to be more difficult over p-type so far. In this letter, we report the achievement of n-type doping in diamond, verified using Hall measurements, which was then used to fabricate Schottky p-i-n diodes measuring a forward current density greater than 300 A/cm2 at 4 V and breakdown voltage of over 500 V with a 3.5-μm-thick drift layer. A Silvaco simulation was performed which agreed well with the experimental data showing turn-ON voltage of 1 V and an ideality factor of 1.04, consistent with the model of a p-i-n diode with a fully depleted n-type contact.
Original language | English (US) |
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Article number | 7515223 |
Pages (from-to) | 1170-1173 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 37 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2016 |
Keywords
- Diamond
- P-I-N diodes
- power semiconductor devices
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering