Diamond is considered to be the ultimate semiconductor for power devices due to its high breakdown electric field, high carrier mobility, and superior thermal properties. The success of diamond-based electronic devices has been difficult due to critical challenges involved with poor doping efficiency and achievement of ohmic contacts. Achieving n-type diamond has proved to be more difficult over p-type so far. In this letter, we report the achievement of n-type doping in diamond, verified using Hall measurements, which was then used to fabricate Schottky p-i-n diodes measuring a forward current density greater than 300 A/cm2 at 4 V and breakdown voltage of over 500 V with a 3.5-μm-thick drift layer. A Silvaco simulation was performed which agreed well with the experimental data showing turn-ON voltage of 1 V and an ideality factor of 1.04, consistent with the model of a p-i-n diode with a fully depleted n-type contact.

Original languageEnglish (US)
Article number7515223
Pages (from-to)1170-1173
Number of pages4
JournalIEEE Electron Device Letters
Issue number9
StatePublished - Sep 2016


  • Diamond
  • P-I-N diodes
  • power semiconductor devices

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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