Degradation of Surface Recombination Velocity at a-Si/c-Si interface under light and temperature

Salman Manzoor, Mariana Bertoni

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


With silicon heterojunction (SHJ) solar cells at their practical efficiency limit, their long-term reliability and stability remains the hindering block toward mass adoption. Precisely, it is the degradation of passivation over time under field operating conditions at amorphous silicon (a-Si:H) and crystalline silicon (c-Si) interface that is a concern. Therefore, we investigate the passivation quality of a-Si:H/c-Si in terms of interface defect and charge density by extracting surface recombination velocity (SRV) using the temperature- and injection- dependent lifetime spectroscopy technique. Our results show passivation quality of the interface degrades at elevated temperature due to thermally activated defects at the surface. Moreover, temporal dependence of a-Si:H/c-Si interface passivation shows degradation due to increase in SRV originating from failing chemical passivation exhibited by an increase in defect density at the interface. Interestingly, field passivation seems to remain the same through the time of these experiments.

Original languageEnglish (US)
Title of host publication2021 IEEE 48th Photovoltaic Specialists Conference, PVSC 2021
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages3
ISBN (Electronic)9781665419222
StatePublished - Jun 20 2021
Event48th IEEE Photovoltaic Specialists Conference, PVSC 2021 - Fort Lauderdale, United States
Duration: Jun 20 2021Jun 25 2021

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Conference48th IEEE Photovoltaic Specialists Conference, PVSC 2021
Country/TerritoryUnited States
CityFort Lauderdale


  • degradation
  • lifetime
  • silicon heterojunction
  • surface passivation

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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