TY - GEN
T1 - Degradation effects in a-si:h thin film transistors and their impact on circuit performance
AU - Allee, David
AU - Clark, Lawrence T.
AU - Shringarpure, Rahul
AU - Venugopal, Sameer M.
AU - Li, Zi P.
AU - Bawolek, Edward J.
PY - 2008
Y1 - 2008
N2 - Amorphous silicon thin film transistors degrade with electrical stress. In particular, the threshold voltage increases significantly with positive gate voltages. The characteristics and mechanisms of the degradation are reviewed. The implications for various types of circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented. Finally, the similarity of degradation in amorphous silicon to negative bias temperature instability in crystalline PMOS is discussed along with potential approaches to reducing the degradation effects.
AB - Amorphous silicon thin film transistors degrade with electrical stress. In particular, the threshold voltage increases significantly with positive gate voltages. The characteristics and mechanisms of the degradation are reviewed. The implications for various types of circuitry including active matrix backplanes, integrated drivers and general purpose digital circuitry are examined. A circuit modeling tool that enables the prediction of complex circuit degradation is presented. Finally, the similarity of degradation in amorphous silicon to negative bias temperature instability in crystalline PMOS is discussed along with potential approaches to reducing the degradation effects.
UR - http://www.scopus.com/inward/record.url?scp=51549089634&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=51549089634&partnerID=8YFLogxK
U2 - 10.1109/RELPHY.2008.4558878
DO - 10.1109/RELPHY.2008.4558878
M3 - Conference contribution
AN - SCOPUS:51549089634
SN - 9781424420506
T3 - IEEE International Reliability Physics Symposium Proceedings
SP - 158
EP - 167
BT - 46th Annual 2008 IEEE International Reliability Physics Symposium Proceedings, IRPS
T2 - 46th Annual 2008 IEEE International Reliability Physics Symposium, IRPS
Y2 - 27 April 2008 through 1 May 2008
ER -