Defect states in red-emitting InxAl1-xAs quantum dots

R. Leon, J. Ibáñez, S. Marcinkevičius, J. Siegert, T. Paskova, B. Monemar, S. Chaparro, C. Navarro, Shane Johnson, Yong-Hang Zhang

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1 Scopus citations


Optical and transport measurements carried out in pn diodes and Schottky barriers containing multilayers of InAlAs quantum dots embedded in AlGaAs barriers show that while red emission from quantum dot (QD) states is obtained at ∼1.8 eV, defect states dominate the optical properties and transport in these quantum dots. These defects provide nonradiative recombination paths, which shortens the carrier lifetimes in QD's to tens of picoseconds (from ∼1 ns) and produce deep level transient spectroscopy (DLTS) peaks in both p and n type structures. DLTS experiments performed with short filling pulses and bias dependent measurements on InAlAs QD's on n-AlGaAs barriers showed that one of the peaks can be attributed to either. QD/barrier interfacial defects or QD electron levels, while other peaks are attributed to defect states in both p and n type structures.

Original languageEnglish (US)
Article number085331
Pages (from-to)853311-853317
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number8
StatePublished - Aug 15 2002

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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