Defect microstructure of thin wurtzite GaN films grown by MBE

B. N. Sverdlov, A. Botchkarev, G. A. Martin, A. Salvador, H. Morkoc, S. C Y Tsen, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


Thin films of wurtzite GaN have been grown by molecular beam epitaxy on 6H SiC (basal plane), Si {111} and sapphire (c-plane) substrates with and without various buffer layers. The defect microstructure of the films and the substrate/buffer/GaN interfacial quality have been characterized by cross-sectional transmission electron microscopy. The morphology was dominated by threading defects that originated at the substrate/buffer and/or buffer/film interfaces. Typical defect densities dropped rapidly with distance from the substrate but remained approx.10 8-10 9/cm 2, depending on the particular substrate, for film thicknesses approaching one micron or more. The best quality films were grown at 770°C on sapphire with AlN buffer layers, and had X-ray rocking curve full-width at half-maximum values of approx. 55arc-sec.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995


OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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