Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties

Engineering & Materials Science

• Semiconductor quantum wells 100%
• Optical properties 79%
• Defects 43%
• Growth temperature 20%
• Crystal defects 20%
• Molecular beam epitaxy 19%
• Epitaxial growth 17%
• Nanostructures 15%
• Diffraction 13%
• Crystals 12%
• Relaxation 11%
• X rays 11%
• Deterioration 11%
• Temperature 10%

Physics & Astronomy

• quantum wells 49%
• optical properties 41%
• defects 35%
• periodic variations 23%
• data correlation 18%
• deterioration 13%
• crystal defects 12%
• temperature 11%
• x ray diffraction 11%
• molecular beam epitaxy 10%
• evaluation 8%
• crystals 6%

Chemical Compounds

• Optical Property 46%
• Molecular Beam Epitaxy 45%
• Epitaxial Growth 38%
• Crystal Defect 37%
• Crystal Growth 31%
• Strength 20%
• Nanomaterial 20%