TY - JOUR
T1 - Defect characterization for epitaxial HgCdTe alloys by electron microscopy
AU - Aoki, T.
AU - Chang, Y.
AU - Badano, G.
AU - Zhao, J.
AU - Grein, C.
AU - Sivananthan, S.
AU - Smith, David
N1 - Funding Information:
This work was supported by the DoD Multidisiplinary University Research Initiative (MURI) program administered by the Army Research Office under Grant DAAD-19-01-1-0462, monitored by Dr. W. Clark. We acknowledge use of facilities in the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2004/4/15
Y1 - 2004/4/15
N2 - This paper provides an overview of electron microscopy observations of epitaxial HgCdTe alloys. Growth of high quality Hg1-xCd xTe epilayers for infrared (IR) detector applications requires a detailed knowledge and control of the experimental factors causing defective material. The type of substrate, the substrate orientation, the substrate temperature during growth, and the Hg/Te flux ratio are factors that have a significant effect on the film morphology. Extensive characterization studies using electron microscopy methods have provided invaluable information about the connection between defect formation and the influence of specific growth parameters. The types of defects observed by electron microscopy include dislocations, twins and stacking faults, surface hillocks and crater defects, and precipitates, as well as spurious effects induced by sample preparation methods. By combining electron microscopy observations with other characterization methods such as in situ ellipsometry, Fourier Transform IR spectroscopy, and hole measurements, it should be possible to improve the quality of HgCdTe epilayers still further to meet the demanding requirements of future generation large format focal-plane arrays.
AB - This paper provides an overview of electron microscopy observations of epitaxial HgCdTe alloys. Growth of high quality Hg1-xCd xTe epilayers for infrared (IR) detector applications requires a detailed knowledge and control of the experimental factors causing defective material. The type of substrate, the substrate orientation, the substrate temperature during growth, and the Hg/Te flux ratio are factors that have a significant effect on the film morphology. Extensive characterization studies using electron microscopy methods have provided invaluable information about the connection between defect formation and the influence of specific growth parameters. The types of defects observed by electron microscopy include dislocations, twins and stacking faults, surface hillocks and crater defects, and precipitates, as well as spurious effects induced by sample preparation methods. By combining electron microscopy observations with other characterization methods such as in situ ellipsometry, Fourier Transform IR spectroscopy, and hole measurements, it should be possible to improve the quality of HgCdTe epilayers still further to meet the demanding requirements of future generation large format focal-plane arrays.
KW - A1. Characterization
KW - A1. Defects
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting mercury compounds
KW - B3. Infrared devices
UR - http://www.scopus.com/inward/record.url?scp=1842475278&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1842475278&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2004.01.063
DO - 10.1016/j.jcrysgro.2004.01.063
M3 - Article
AN - SCOPUS:1842475278
SN - 0022-0248
VL - 265
SP - 224
EP - 234
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1-2
ER -