Current effects on high magnetic field resonances in a dot array

L. H. Lin, N. Aoki, K. Nakao, Y. Ochiai, F. Ge, A. Andresen, C. Prasad, J. P. Bird, D. K. Ferry, K. Ishibashi, Y. Aoyagi, T. Sugano

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


In recent studies of disordered quantum dot arrays, it was found that a re-entrant metal-insulator transition occurs in these structures as the gate voltage is varied, even though there is no change in carrier density or disorder. Here, we study resonances that appear with the quantum Hall effect in these dot arrays. Several resonances are observed on the side of the plateaus, which may be due either to charging of isolated islands or to transmission resonances in the quantum point contacts. Heating of the carriers causes these peaks to decrease with an energy relaxation time comparable to that of the dots themselves.

Original languageEnglish (US)
Pages (from-to)327-330
Number of pages4
JournalSuperlattices and Microstructures
Issue number5
StatePublished - May 2000
Event3rd International Workshop on Surfaces and Interfaces In Mesoscopic Devices (SIMD'99) - Maui, HI, USA
Duration: Dec 6 1999Dec 10 1999

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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