Crystalline SrZrO3 deposition on Ge (001) by atomic layer deposition for high-k dielectric applications

Shen Hu, Li Ji, Pei Yu Chen, Bryce I. Edmondson, Heng Lu Chang, Agham Posadas, Hsin Wei Wu, Edward T. Yu, David Smith, Alexander A. Demkov, John G. Ekerdt

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9 Scopus citations


Heteroepitaxial growth of crystalline SrZrO3 (SZO) on Ge (001) by atomic layer deposition is reported. Ge (001) surfaces are pretreated with 0.5-monolayers (ML) of Ba and an amorphous ∼3-nm SZO layer is grown from strontium bis(triisopropylcyclopentadienyl), tetrakis (dimethylamido) zirconium, and water at 225 °C. This ∼3-nm layer crystallizes at 590 °C and subsequent SZO growth at 225 °C leads to crystalline films that do not require further annealing. The film properties are investigated using X-ray photoelectron spectroscopy, x-ray diffraction, aberration-corrected electron microscopy, and capacitance-voltage measurements of metal-oxide semiconductor capacitor structures. Capacitance-voltage measurements of the SrZrO3/Ge heterojunctions reveal a dielectric constant of 30 for SrZrO3 and a leakage current density of 2.1 × 10−8A/cm2 at 1 MV/cm with an equivalent oxide thickness of 0.8 nm. Oxygen plasma pretreatment of Ge (001), Zintl layer formation with 0.5 ML Ba, and atomic deuterium post-growth treatment were explored to lower interface trap density (Dit) and achieved a Dit of 8.56 × 1011 cm−2 eV−1.

Original languageEnglish (US)
Article number044102
JournalJournal of Applied Physics
Issue number4
StatePublished - Jul 28 2018

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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