Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

Engineering & Materials Science

• Strained silicon 100%
• Semiconductor quantum wells 93%
• Heterojunctions 78%
• Field effect transistors 64%
• Cryogenics 63%
• Silicon 47%
• Characterization (materials science) 35%
• Electronic properties 30%
• Fabrication 29%
• Chemical vapor deposition 23%
• Single crystals 23%
• Atmospheric pressure 22%
• Modulation 15%
• Substrates 14%
• Networks (circuits) 11%
• Temperature 8%

Chemical Compounds

• Cryogenics 65%
• Field Effect 59%
• Electronic Property 49%
• Compound Mobility 45%
• Single Crystalline Solid 42%
• Pressure 34%
• Application 18%

Physics & Astronomy

• cryogenics 56%
• field effect transistors 47%
• quantum wells 46%
• silicon 32%
• fabrication 18%
• characterization 16%
• CMOS 13%
• atmospheric pressure 13%
• performance 13%
• vapor deposition 11%
• modulation 9%
• single crystals 9%
• electronics 7%