Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM

Q. Chen; B. S. McKeon; J. Becker; S. Zhang; C. K. Hu; T. H. Gfroerer; T. H. Gfroerer; Y. H. Zhang; D. J. Smith; Y. Zhang

doi:10.1109/PVSC.2018.8548288

Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM

Q. Chen, B. S. McKeon, J. Becker, S. Zhang, C. K. Hu, T. H. Gfroerer, T. H. Gfroerer, Y. H. Zhang, D. J. Smith, Y. Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.

Original language	English (US)
Title of host publication	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	3234-3236
Number of pages	3
ISBN (Electronic)	9781538685297
DOIs	https://doi.org/10.1109/PVSC.2018.8548288
State	Published - Nov 26 2018
Event	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - Waikoloa Village, United States Duration: Jun 10 2018 → Jun 15 2018

Publication series

Name	2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC

Other

Other	7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018
Country/Territory	United States
City	Waikoloa Village
Period	6/10/18 → 6/15/18

ASJC Scopus subject areas

Energy Engineering and Power Technology
Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2018.8548288

Cite this

Chen, Q., McKeon, B. S., Becker, J., Zhang, S., Hu, C. K., Gfroerer, T. H., Gfroerer, T. H., Zhang, Y. H., Smith, D. J., & Zhang, Y. (2018). Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC (pp. 3234-3236). Article 8548288 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2018.8548288

Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. / Chen, Q.; McKeon, B. S.; Becker, J. et al.
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. p. 3234-3236 8548288 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chen, Q, McKeon, BS, Becker, J, Zhang, S, Hu, CK, Gfroerer, TH, Gfroerer, TH, Zhang, YH , Smith, DJ & Zhang, Y 2018, Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. in 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC., 8548288, 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, Institute of Electrical and Electronics Engineers Inc., pp. 3234-3236, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, Waikoloa Village, United States, 6/10/18. https://doi.org/10.1109/PVSC.2018.8548288

Chen Q, McKeon BS, Becker J, Zhang S, Hu CK, Gfroerer TH et al. Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc. 2018. p. 3234-3236. 8548288. (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC). doi: 10.1109/PVSC.2018.8548288

Chen, Q. ; McKeon, B. S. ; Becker, J. et al. / Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM. 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 3234-3236 (2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC).

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abstract = "An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.",

author = "Q. Chen and McKeon, {B. S.} and J. Becker and S. Zhang and Hu, {C. K.} and Gfroerer, {T. H.} and Gfroerer, {T. H.} and Zhang, {Y. H.} and Smith, {D. J.} and Y. Zhang",

note = "Funding Information: The work at UNCC was supported by ARO/MURI (W911NF-10-1-0524) and ARO/Electronics (W911NF-16-1-0263). YZ acknowledge the support of Bissell Distinguished Professorship at UNCC. Publisher Copyright: {\textcopyright} 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.; 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 ; Conference date: 10-06-2018 Through 15-06-2018",

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doi = "10.1109/PVSC.2018.8548288",

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AU - McKeon, B. S.

AU - Becker, J.

AU - Zhang, S.

AU - Hu, C. K.

AU - Gfroerer, T. H.

AU - Zhang, Y. H.

AU - Smith, D. J.

AU - Zhang, Y.

N1 - Funding Information: The work at UNCC was supported by ARO/MURI (W911NF-10-1-0524) and ARO/Electronics (W911NF-16-1-0263). YZ acknowledge the support of Bissell Distinguished Professorship at UNCC. Publisher Copyright: © 2018 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.

PY - 2018/11/26

Y1 - 2018/11/26

N2 - An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.

AB - An array of correlative and spatially-resolved techniques, including electroluminescence, photoluminescence, Raman, I-V curve, and high-resolution TEM, have been performed on both GaAs and CdTe solar cells, to study the impact of individual dislocation defects and defect clusters on device performance, the dependence of the impact on the device operation conditions, and the microscopic structures of the defects. This approach offers quantitative and definitive correlation between the atomistic structure of a defect and its effects in a real device.

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Correlative characterization of dislocation defects and defect clusters in GaAs and CdTe solar cells by spatially resolved optical techniques and high-resolution TEM

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