Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

H. Xie; R. Prioli; G. Torelly; H. Liu; A. M. Fischer; R. Jakomin; R. Mourão; R. Kawabata; M. P. Pires; P. L. Souza; Fernando Ponce

doi:10.1088/1361-6641/aa6471

Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

H. Xie, R. Prioli, G. Torelly, H. Liu, A. M. Fischer, R. Jakomin, R. Mourão, R. Kawabata, M. P. Pires, P. L. Souza, Fernando Ponce

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 15 nm. Two photoluminescence peaks associated with QD emission are attributed to the ground and the first excited states transitions. The luminescence peak width is correlated with the distribution of QD diameters through the diameter dependent QD energy levels.

Original language	English (US)
Article number	055013
Journal	Semiconductor Science and Technology
Volume	32
Issue number	5
DOIs	https://doi.org/10.1088/1361-6641/aa6471
State	Published - Apr 12 2017

Keywords

InAs quantum dots
intermediate-band solar cells
optical properties of quantum dots
size distribution of quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/1361-6641/aa6471

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title = "Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots",

abstract = "InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 15 nm. Two photoluminescence peaks associated with QD emission are attributed to the ground and the first excited states transitions. The luminescence peak width is correlated with the distribution of QD diameters through the diameter dependent QD energy levels.",

keywords = "InAs quantum dots, intermediate-band solar cells, optical properties of quantum dots, size distribution of quantum dots",

author = "H. Xie and R. Prioli and G. Torelly and H. Liu and Fischer, {A. M.} and R. Jakomin and R. Mour{\~a}o and R. Kawabata and Pires, {M. P.} and Souza, {P. L.} and Fernando Ponce",

note = "Funding Information: The research at ASU was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. The material design, growth, and theoretical calculations were partially supported by the Fundacao de Amparo a Pesquisa do Estado de Rio de Janeiro (FAPERJ) Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES), and by the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq). Publisher Copyright: {\textcopyright} 2017 IOP Publishing Ltd.",

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AU - Xie, H.

AU - Prioli, R.

AU - Torelly, G.

AU - Liu, H.

AU - Fischer, A. M.

AU - Jakomin, R.

AU - Mourão, R.

AU - Kawabata, R.

AU - Pires, M. P.

AU - Souza, P. L.

AU - Ponce, Fernando

N1 - Funding Information: The research at ASU was supported in part by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. The material design, growth, and theoretical calculations were partially supported by the Fundacao de Amparo a Pesquisa do Estado de Rio de Janeiro (FAPERJ) Coordenacao de Aperfeicoamento de Pessoal de Nivel Superior (CAPES), and by the Conselho Nacional de Desenvolvimento Cientifico e Tecnologico (CNPq). Publisher Copyright: © 2017 IOP Publishing Ltd.

PY - 2017/4/12

Y1 - 2017/4/12

N2 - InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 15 nm. Two photoluminescence peaks associated with QD emission are attributed to the ground and the first excited states transitions. The luminescence peak width is correlated with the distribution of QD diameters through the diameter dependent QD energy levels.

AB - InAs QDs embedded in an AlGaAs matrix have been produced by MOVPE with a partial capping and annealing technique to achieve controllable QD energy levels that could be useful for solar cell applications. The resulted spool-shaped QDs are around 5 nm in height and have a log-normal diameter distribution, which is observed by TEM to range from 5 to 15 nm. Two photoluminescence peaks associated with QD emission are attributed to the ground and the first excited states transitions. The luminescence peak width is correlated with the distribution of QD diameters through the diameter dependent QD energy levels.

KW - InAs quantum dots

KW - intermediate-band solar cells

KW - optical properties of quantum dots

KW - size distribution of quantum dots

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Correlation between size distribution and luminescence properties of spool-shaped InAs quantum dots

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Keywords

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