Correlated structural and optical characterization of ammonothermally grown bulk GaN

J. Bai, M. Dudley, B. Raghothamachar, P. Gouma, Brian Skromme, L. Chen, P. J. Hartlieb, E. Michaels, J. W. Kolis

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Structural [transmission electron microscopy (TEM) and synchrotron white-beam x-ray topography (SWBXT)] and optical [low temperature photoluminescence (PL)] methods were used to investigate a series of ammonothermally grown bulk GaN crystals containing stacking faults. TEM show that occurrence of low-temperature PL peaks observed in the 3.30-3.45 eV rage correlates with the observation of basal plane stacking faults (BPSF). This supports the association of PL peaks with quantum-well regions. The results shows that with the ammonothermal growth technique, it is possible to produce high quality millimeter-sized crystals with low structural defect density and high optical quality.

Original languageEnglish (US)
Pages (from-to)3289-3291
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - Apr 26 2004

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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