TY - JOUR
T1 - Control of composition and crystallinity in the molecular beam epitaxy of strain-compensated Si1 -x-yGexCy alloys on Si
AU - Croke, E. T.
AU - Hunter, A. T.
AU - Ahn, C. C.
AU - Laursen, T.
AU - Chandrasekhar, D.
AU - Bair, A. E.
AU - Smith, David
AU - Mayer, J. W.
N1 - Funding Information:
The authors gratefully acknowledge the fine technical assistance of D. Courtney for performing the X-ray characterization discussed here and the partial support of the Defense Advanced Research Projects Agency, monitored by Lt. Col. Gernot Pomrenke under Contract Number MDA972-9% 3-0047. Electron microscopy conducted at the Center for High Resolution Electron Microscopy at Arizona State University was supported by NSF Grant DMR-93-14326.
PY - 1997/5
Y1 - 1997/5
N2 - In this paper, we present a mass-spectrometry-based approach to the control of C concentration during molecular beam epitaxy (MBE) of Si1 -x-yGexCySi superlattices. High-resolution X-ray diffraction, ion beam analysis, and transmission electron microscopy (TEM) were used to characterize composition and crystallinity in a series of superlattices for which the average strain condition was designed to range from biaxial compression to biaxial tension. For each sample, secondary ion mass spectrometry and Rutherford backscattering spectrometry confirmed that the average composition of each Si1 -x-yGexCy layer was constant during growth. However, TEM revealed strain contrast variations within the Si1 -x-yGexCy layers, leading to the conclusion that the presence of C on the wafer surface leads to laterally inhomogenous incorporation of C (and possibly Ge). TEM also showed that all samples were essentially free of extended defects except for short microtwins observed in the tensile-strained sample, that originated in the Si1 -x-yGexCy. layers and terminated in the Si layers directly above.
AB - In this paper, we present a mass-spectrometry-based approach to the control of C concentration during molecular beam epitaxy (MBE) of Si1 -x-yGexCySi superlattices. High-resolution X-ray diffraction, ion beam analysis, and transmission electron microscopy (TEM) were used to characterize composition and crystallinity in a series of superlattices for which the average strain condition was designed to range from biaxial compression to biaxial tension. For each sample, secondary ion mass spectrometry and Rutherford backscattering spectrometry confirmed that the average composition of each Si1 -x-yGexCy layer was constant during growth. However, TEM revealed strain contrast variations within the Si1 -x-yGexCy layers, leading to the conclusion that the presence of C on the wafer surface leads to laterally inhomogenous incorporation of C (and possibly Ge). TEM also showed that all samples were essentially free of extended defects except for short microtwins observed in the tensile-strained sample, that originated in the Si1 -x-yGexCy. layers and terminated in the Si layers directly above.
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U2 - 10.1016/S0022-0248(96)00860-3
DO - 10.1016/S0022-0248(96)00860-3
M3 - Article
AN - SCOPUS:0031144933
SN - 0022-0248
VL - 175-176
SP - 486
EP - 492
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - PART 1
ER -