Continuous wave operation of InAs/InAsxSb1-x midinfrared lasers

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Effective band gaps of type-II superlattices (SLs) can cover a wide infrared wavelength range, even beyond the narrowest band gap of any natural antimonide semiconductor alloys. This letter reports the first InAs/InAsxSb1-x type-II SL lasers with cw, optically pumped operation up to 95 K. The stimulated emission results from spatially indirect transitions of relatively extended electron states in the InAs/InAsxSb1-x SL conduction band to the hole states that are localized in the InAsx Sb1-x layers. The lasing wavelength is around 3.3-3.4 μm. Equivalent threshold current densities are estimated to be 3.3 and 56 A/cm2 at sample temperatures of 5 and 95 K, respectively. The characteristic temperature (T0) is approximately 32 K. These results demonstrate that the InAs/InAsxSb1-x type-II SL clad by AlAs0.16Sb0.84 ordered-alloy layers is a promising material system for midwave infrared semiconductor lasers.

Original languageEnglish (US)
Pages (from-to)118
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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