Conductance fluctuations in a ballistic in-plane gated InGaAs quantum dot

K. M. Connolly, D. P. Pivin, D. K. Ferry, H. H. Wieder

Research output: Contribution to journalArticlepeer-review

17 Scopus citations


Recent experiments have examined the magnetoconductance properties of mesoscopic quantum dots, defined in high mobility GaAs/AlGaAs heterojunctions utilizing split-gate techniques. Here, we report on a submicron, square quantum dot defined in a pseudomorphic InGaAs/GaAs single quantum well through an in-plane gate (IPG) technique. The high mobility of the sample ensures that the mean free path is larger than the characteristic dimensions of the quantum dot; hence transport through the structure is ballistic. These structures exhibit reproducible conductance fluctuations and weak localization. We discuss the results of low temperature studies of fluctuations observed in the low field magnetoconductance. These fluctuations appear to be regular and quasiperiodic, containing only a few frequencies in the Fourier spectrum.

Original languageEnglish (US)
Pages (from-to)307-315
Number of pages9
JournalSuperlattices and Microstructures
Issue number3
StatePublished - Oct 1996


  • Ballistic quantum dots
  • In-plane gate
  • InGaAs

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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