Comprehensive approach to MuGFET metrology

G. F. Lorusso, P. Leray, T. Vandeweyer, M. Ercken, C. Delvaux, I. Pollentier, S. Cheng, N. Collaert, R. Rooyackers, B. Degroote, M. Jurczak, S. Biesemans, O. Richard, H. Bender, A. Azordegan, J. McCormack, S. Shirke, J. Prochazka, T. Long

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations


As we move forward to the 45 and 32nm node, MuGFET's (Multi-Gate Field-Effect Transistor) are considered more and more as a necessary alternative to keep pace with Moore's Law. If proven manufacturable, MuGFET's could eventually replace conventional CMOS transistors within a few years. The ability to perform proper and extensive metrology in a production environment is then essential. We investigate here some of the requirements of MuGFET metrology. Accuracy and line width roughness (LWR) metrology will play an essential role, because the small dimension of the features involved. 3D metrology is required when dealing with non-planar devices. Sophisticated check of optical proximity correction (OPC) is needed in order to ensure that the design is respected. We propose here some possible solutions to address the needs of MuGFET metrology in a production-worthy fashion. A procedure to calibrate CDSEM to TEM for accuracy is developed. We performed LWR metrology of fins in a fully automated way by using CDSEM, while the 3D information is obtained by means of scatterometry. Finally, we will discuss the application of design-based metrology (DBM) to MuGFET OPC validation.

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XX
StatePublished - 2006
Externally publishedYes
EventMetrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States
Duration: Jan 20 2006Jan 23 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6152 I
ISSN (Print)0277-786X


ConferenceMetrology, Inspection, and Process Control for Microlithography XX
Country/TerritoryUnited States
CitySan Jose, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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