Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4

R. T. Beeler, Chi Xu, David Smith, G. Grzybowski, Jose Menendez, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Fingerprint

Dive into the research topics of 'Compositional dependence of the absorption edge and dark currents in Ge1-x-ySixSny/Ge(100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si 4H10, and SnD4'. Together they form a unique fingerprint.

Physics & Astronomy