Complementary p-MODFET and n-HB MESFET (Al,Ga) As Transistors

R. A. Kiehl; A. C. Gossard

doi:10.1109/EDL.1984.26011

Complementary p-MODFET and n-HB MESFET (Al,Ga) As Transistors

R. A. Kiehl, A. C. Gossard

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29 Scopus citations

Abstract

A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/l-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.

Original language	English (US)
Pages (from-to)	521-523
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	5
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1984.26011
State	Published - Dec 1984
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1984.26011

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abstract = "A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/l-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.",

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AU - Kiehl, R. A.

AU - Gossard, A. C.

PY - 1984/12

Y1 - 1984/12

N2 - A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/l-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.

AB - A complementary transistor structure that utilizes a p-channel modulation-doped FET (p-MODFET) to produce improved p-channel characteristics if reported for the first time. The structure also includes a new type of n-channel MESFET in which the electrons are confined by an n-p heterojunction barrier (n-HB MESFET). The complementary transistor pair is fabricated on a novel MBE-grown n-GaAs/p-(Al,Ga)As/l-GaAs heterostructure. The experimental current-voltage characteristics are presented and demonstrate that this is a promising approach for the development of GaAs-based high-speed complementary logic circuits.

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Complementary p-MODFET and n-HB MESFET (Al,Ga) As Transistors

Abstract

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