Comparison of wet and dry etching of zinc indium oxide for thin film transistors with an inverted gate structure

Engineering & Materials Science

• Dry etching 100%
• Gates (transistor) 97%
• Wet etching 95%
• Indium 89%
• Thin film transistors 87%
• Zinc 74%
• Oxides 59%
• Plastics 50%
• Amorphous semiconductors 43%
• Oxide films 28%
• Passivation 27%
• Oxide semiconductors 27%
• Etching 24%
• Microelectronics 24%
• Surface treatment 24%
• Thermodynamic stability 23%
• Transistors 19%
• Fabrication 16%
• Substrates 16%

Physics & Astronomy

• indium oxides 67%
• zinc oxides 66%
• transistors 54%
• etching 51%
• plastics 40%
• thin films 35%
• incompatibility 22%
• surface treatment 18%
• microelectronics 17%
• selectivity 16%
• passivity 15%
• thermal stability 15%
• slopes 12%
• saturation 11%
• oxides 10%
• fabrication 10%
• sensitivity 10%
• profiles 9%
• performance 7%

Chemical Compounds

• Etching 61%
• Oxide 37%
• Microelectronics 25%
• Chemical Passivation 23%
• Compound Mobility 17%
• Semiconductor 17%
• Amorphous Material 15%
• Thermal Stability 15%
• Environment 13%
• Reaction Yield 9%
• Surface 7%