Comparison of surface cleaning processes for diamond C(001)

Peter K. Baumann, T. P. Humphreys, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations


Two wet chemical cleaning processes (a conventional chromic acid clean and an electrochemical etch) and a H-plasma exposure have been employed to clean natural type IIb semiconducting diamond C(001) wafers. The effects of these processes on the diamond surface have been assessed and compared. As evidenced by Auger electron spectroscopy (AES), an oxygen free surface could be obtained following annealing to 900°C for the electrochemical process compared to 1050°C for the chromic acid etch. In addition, the technique of Atomic Force Microscopy (AFM) demonstrated the presence of oriented pits on the surface of samples electrochemically etched for long times at high currents. Furthermore, heteroepitaxial Cu films have been grown on the diamond substrates cleaned by a process as described above. By means of Ultraviolet Photoemission Spectroscopy (UPS) a Schottky barrier height of Φ B ≅ 1.0 eV was measured. Furthermore, the presence a negative electron affinity (NEA) has been determined.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 1994
Externally publishedYes
EventProceedings of the 1994 MRS Spring Meeting - San Francisco, CA, USA
Duration: Apr 4 1994Apr 8 1994


OtherProceedings of the 1994 MRS Spring Meeting
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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