Compact modeling of amorphous-silicon thin-film transistors with BSIM3

Rahul Shringarpure, Sameer Venugopal, Korhan Kaftanoglu, Lawrence T. Clark, David Allee, Edward Bawolek

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


A novel approach of modeling a-Si:H TFTs with the industry-standard BSIM3 compact model is presented. The described approach defines the a-Si:H TFT drain current and terminal charges as explicit functions of terminal voltages using a minimum set of BSIM3 parameters. The set of BSIM3 parameters is chosen based on the electrical and physical characteristics of the a-Si:H TFT and their values extracted from measured data. By using the selected BSIM3 model parameters, the a-Si:H TFT is simulated inside SPICE to fit the simulated /-Vand C-V curves with the measured results. Finally, the extracted BSIM3 model is validated by simulating the kickback voltage effect in an AMLCD pixel array.

Original languageEnglish (US)
Pages (from-to)1147-1155
Number of pages9
JournalJournal of the Society for Information Display
Issue number11
StatePublished - Nov 2008


  • Amorphous-silicon thin-film transistors
  • BSIM3
  • Circuit simulation
  • Device modeling
  • Kickback voltage

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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