Compact modeling for RF and microwave integrated circuits

A. M. Niknejad, M. Chan, C. Hu, B. Brodersen, X. Xi, J. He, S. Emami, C. Doan, Y. Cao, P. Su, H. Wan, M. Dunga, C. H. Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Compact modeling has been an integral part of the design of integrated circuits for digital and analog applications. The availability of scalable CMOS device models has enabled rapid simulation and design of present and future device technologies. Increasingly RF and microwave circuits designed with CMOS and SiGe technologies obviate the need for compact modeling in this domain. In this paper we will summarize the unique requirements of high-frequency compact modeling efforts by focusing on key components, such as passive devices, interconnect, substrate coupling, and active devices.

Original languageEnglish (US)
Title of host publication2003 Nanotechnology Conference and Trade Show - Nanotech 2003
EditorsM. Laudon, B. Romanowicz
Pages294-297
Number of pages4
StatePublished - 2003
Externally publishedYes
Event2003 Nanotechnology Conference and Trade Show - Nanotech 2003 - San Francisco, CA, United States
Duration: Feb 23 2003Feb 27 2003

Publication series

Name2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Volume2

Other

Other2003 Nanotechnology Conference and Trade Show - Nanotech 2003
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/23/032/27/03

Keywords

  • Interconnect modeling
  • Passive device modeling
  • RF and microwave compact modeling
  • Substrate coupling

ASJC Scopus subject areas

  • General Engineering

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