CMOS TFT Op-Amps: Performance and limitations

Aritra Dey, Adrian Avendanno, Sameer Venugopal, David Allee, Manuel Quevedo, Bruce Gnade

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


In this letter, we demonstrate the feasibility of building thin-film transistor (TFT) complementary metaloxidesemiconductor (CMOS) operational amplifiers (op-amps) at low temperature (180 °C) for large-area sensor applications. The classic two-stage Miller-compensated CMOS design is built using a-Si:H and pentacene TFTs. In addition, we have studied the impact of electrical stress-induced aging of TFTs on op-amp performance using two different kinds of biasing circuits.

Original languageEnglish (US)
Article number5750018
Pages (from-to)650-652
Number of pages3
JournalIEEE Electron Device Letters
Issue number5
StatePublished - May 2011


  • Analog-to-digital converter (ADC)
  • hydrogenated amorphous silicon (a-Si:H)
  • op-amp
  • pentacene
  • thin-film transistors (TFTs)
  • unity-gain frequency (UGF)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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