Chemical imaging of InGaAs/InAlAs quantum wells

G. Mountjoy, Peter Crozier, P. L. Fejes, R. K. Tsui, G. D. Kramer

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    We have applied high resolution chemical imaging in a transmission electron microscope to study compositional variations across InGaAs/InAlAs double quantum well structures. The structures of interest are grown on an InP substrate and consist of two 40 angstroms layers of InGaAs separated by 20 angstroms of InAlAs. For this (InGa) x(InAl) 1-xAs system, we have been able to obtain compositional information with an accuracy of about 20% and a maximum spatial resolution of 1/2×1/2 unit cell. The results clearly show irregularities on a monatomic scale.

    Original languageEnglish (US)
    Title of host publicationMaterials Research Society Symposium - Proceedings
    Number of pages6
    StatePublished - 1997
    EventProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
    Duration: Dec 3 1996Dec 5 1996


    OtherProceedings of the 1996 MRS Fall Meeting
    CityBoston, MA, USA

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials


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