Lateral super‐lattices along the surface of a semiconductor can generate mini‐band structure for distances of the order of 1000 Å or less. The detailed gap structure depends noticeably on the charge in the structure. Under conditions of strong population inversion, synergetic switching behavior and space‐charge waves can be expected to occur.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics