TY - JOUR
T1 - Characterization of structural defects in SnSe2 thin films grown by molecular beam epitaxy on GaAs (111)B substrates
AU - Tracy, Brian D.
AU - Li, Xiang
AU - Liu, Xinyu
AU - Furdyna, Jacek
AU - Dobrowolska, Margaret
AU - Smith, David
N1 - Funding Information:
The work at Notre Dame was supported by NSF Grant DMR14-00432 . The authors acknowledge partial support from AFOSR ( FA9550-15-1-0196 ) and the use of facilities within the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.
Publisher Copyright:
© 2016
PY - 2016/11/1
Y1 - 2016/11/1
N2 - Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe//[11¯0]GaAs, while the diselenide films were consistent with the Space Group P3¯m1, and had the epitaxial growth relationship [21¯1¯0]SnSe2//[11¯0] GaAs.
AB - Tin selenide thin films have been grown by molecular beam epitaxy on GaAs (111)B substrates at a growth temperature of 150 °C, and a microstructural study has been carried out, primarily using the technique of transmission electron microscopy. The Se:Sn flux ratio during growth was systematically varied and found to have a strong impact on the resultant crystal structure and quality. Low flux ratios (Se:Sn=3:1) led to defective films consisting primarily of SnSe, whereas high flux ratios (Se:Sn>10:1) gave higher quality, single-phase SnSe2. The structure of the monoselenide films was found to be consistent with the Space Group Pnma with the epitaxial growth relationship of [011]SnSe//[11¯0]GaAs, while the diselenide films were consistent with the Space Group P3¯m1, and had the epitaxial growth relationship [21¯1¯0]SnSe2//[11¯0] GaAs.
KW - A1. Characterization
KW - A1. Crystal structure
KW - A3. Molecular beam epitaxy
KW - B2. Semiconducting materials
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U2 - 10.1016/j.jcrysgro.2016.06.022
DO - 10.1016/j.jcrysgro.2016.06.022
M3 - Article
AN - SCOPUS:84981350471
SN - 0022-0248
VL - 453
SP - 58
EP - 64
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
ER -