Characterization of plasma-enhanced atomic layer deposition of Al ₂O₃ using dimethylaluminum isopropoxide

Engineering & Materials Science

• Atomic layer deposition 100%
• Plasmas 60%
• Photoelectron spectroscopy 44%
• Oxygen 42%
• Aluminum oxide 37%
• X rays 35%
• Rutherford backscattering spectroscopy 24%
• Spectroscopic ellipsometry 23%
• Chemisorption 19%
• Refraction 17%
• Atomic force microscopy 16%
• Temperature 15%
• Energy gap 14%
• Spectroscopy 14%
• Adsorption 12%
• Contamination 12%
• Energy dissipation 11%
• Surface roughness 10%
• Carbon 9%
• Hot Temperature 6%

Chemical Compounds

• Atomic Layer Epitaxy 75%
• Plasma 40%
• Photoelectron Spectroscopy 32%
• Dioxygen 31%
• Liquid Film 31%
• Refraction 20%
• Rutherford Backscattering Spectroscopy 20%
• Reflectivity 18%
• Ambient Reaction Temperature 18%
• Ellipsometry 17%
• Surface Roughness 16%
• Chemisorption 14%
• Atomic Force Microscopy 12%
• Band Gap 12%
• Spectroscopy 10%
• Adsorption 8%
• Energy 7%
• Carbon Atom 7%
• Time 5%
• Surface 5%

Physics & Astronomy

• atomic layer epitaxy 67%
• oxygen plasma 45%
• characterization 36%
• spectroscopy 27%
• photoelectric emission 22%
• x rays 17%
• room temperature 14%
• chemisorption 14%
• reactivity 13%
• ellipsometry 12%
• refraction 11%
• contamination 11%
• backscattering 11%
• surface roughness 11%
• energy dissipation 10%
• adsorption 9%
• atomic force microscopy 9%
• reflectance 9%
• saturation 9%
• cycles 8%
• carbon 8%
• optimization 8%
• oxygen 7%
• temperature 3%