Characterization of Group III-nitride semiconductors by high-resolution electron microscopy

D. Chandrasekhar, David Smith, S. Strite, M. E. Lin, H. Morkoç

Research output: Contribution to journalArticlepeer-review

57 Scopus citations


High-resolution electron microscopy has been used to characterize the microstructure of thin films of GaN, AlN and InN, as grown by plasma-enhanced molecular beam epitaxy. Zincblende and wurtzite polytypes were preferentially nucleated using (001) GaAs and (0001) 6H SiC substrates, respectively. Stacking faults and microtwins along 111 planes dominated the zincblende films, whereas stacking faults along 0002 planes and threading defects originating at the substrate surface were most prevalent in the wurtzite phase. Improved crystal quality was achieved by growing the films on suitable buffer layers.

Original languageEnglish (US)
Pages (from-to)135-142
Number of pages8
JournalJournal of Crystal Growth
Issue number3
StatePublished - Jul 1 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


Dive into the research topics of 'Characterization of Group III-nitride semiconductors by high-resolution electron microscopy'. Together they form a unique fingerprint.

Cite this