Characterization of charging in semiconductor device materials by electron holography

Martha McCartney

doi:10.1093/jmicro/54.3.239

Characterization of charging in semiconductor device materials by electron holography

Martha McCartney

Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm^-1, on the order of the breakdown voltage.

Original language	English (US)
Pages (from-to)	239-242
Number of pages	4
Journal	Journal of Electron Microscopy
Volume	54
Issue number	3
DOIs	https://doi.org/10.1093/jmicro/54.3.239
State	Published - Jun 2005

Keywords

Breakdown voltage
Charging
Electron holography
Electrostatic potential
Semiconductor device

ASJC Scopus subject areas

Instrumentation

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10.1093/jmicro/54.3.239

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@article{0c9de514963545deb943f0e531e835cb,

title = "Characterization of charging in semiconductor device materials by electron holography",

abstract = "Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.",

keywords = "Breakdown voltage, Charging, Electron holography, Electrostatic potential, Semiconductor device",

author = "Martha McCartney",

note = "Funding Information: The electron holography was performed at the Center for High Resolution Electron Microscopy at Arizona State University. The author gratefully acknowledges the collaboration of Dr Ken Downing. Portions of this work were funded by the Semiconductor Research Corporation No. 942.001.",

year = "2005",

month = jun,

doi = "10.1093/jmicro/54.3.239",

language = "English (US)",

volume = "54",

pages = "239--242",

journal = "Journal of Electron Microscopy",

issn = "0022-0744",

publisher = "Japanese Society of Microscopy",

number = "3",

}

TY - JOUR

T1 - Characterization of charging in semiconductor device materials by electron holography

AU - McCartney, Martha

N1 - Funding Information: The electron holography was performed at the Center for High Resolution Electron Microscopy at Arizona State University. The author gratefully acknowledges the collaboration of Dr Ken Downing. Portions of this work were funded by the Semiconductor Research Corporation No. 942.001.

PY - 2005/6

Y1 - 2005/6

N2 - Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

AB - Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

KW - Breakdown voltage

KW - Charging

KW - Electron holography

KW - Electrostatic potential

KW - Semiconductor device

UR - http://www.scopus.com/inward/record.url?scp=27744505942&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=27744505942&partnerID=8YFLogxK

U2 - 10.1093/jmicro/54.3.239

DO - 10.1093/jmicro/54.3.239

M3 - Article

C2 - 16275780

AN - SCOPUS:27744505942

SN - 0022-0744

VL - 54

SP - 239

EP - 242

JO - Journal of Electron Microscopy

JF - Journal of Electron Microscopy

IS - 3

ER -

Characterization of charging in semiconductor device materials by electron holography

Abstract

Keywords

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