Characterization of charging in semiconductor device materials by electron holography

Martha McCartney

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Quantitative analysis of electrostatic potential in semiconductor device samples using off-axis electron holography in the electron microscope is complicated by the presence of charged insulating layers. Preliminary results indicate that the behavior of p-type material near the Si-insulator interface may differ from that of n-type if the insulator is charging. Coating one side of the sample surface with carbon usually eliminates charging effects. Holographic phase measurements on thin silicon oxide film at liquid nitrogen temperature indicates that the maximum electric field near the edge of an charged region is 18 MV cm-1, on the order of the breakdown voltage.

Original languageEnglish (US)
Pages (from-to)239-242
Number of pages4
JournalJournal of Electron Microscopy
Issue number3
StatePublished - Jun 2005


  • Breakdown voltage
  • Charging
  • Electron holography
  • Electrostatic potential
  • Semiconductor device

ASJC Scopus subject areas

  • Instrumentation


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