Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates

Xinyu Liu, David Smith, Helin Cao, Yong P. Chen, Jin Fan, Yong-Hang Zhang, Richard E. Pimpinella, Malgorzata Dobrowolska, Jacek K. Furdyna

Research output: Contribution to journalArticlepeer-review

34 Scopus citations


Films of pseudohexagonal Bi2Te3, Bi 2Se3 and their alloys were successfully grown by molecular beam epitaxy on GaAs (001) substrates. The growth mechanism and structural properties of these films were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction (XRD), high-resolution transmission electron microscopy, and Raman spectroscopy and mapping. The results indicate that the epitaxial films are highly uniform and are of high crystalline quality.

Original languageEnglish (US)
Article number02B103
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Issue number2
StatePublished - Mar 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry


Dive into the research topics of 'Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates'. Together they form a unique fingerprint.

Cite this