Enhanced voltage silicon metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated on a 45nm SOI CMOS technology with no process changes. MESFETs scaled to L g = 184nm were fabricated and show a peak f T of 35GHz, current drive of 112mA/mm and breakdown voltages exceeding 4.5V whereas the nominal CMOS voltage was less than 1V on the same process. The devices were characterized from DC to 40GHz and an industry standard TOM3 model has been developed describing their operation. A board level Class AB power amplifier operating at 433MHz was designed, fabricated and measured to have a peak output power of 17dBm and peak PAE of 42.5%. The supply voltage of the PA was more than twice the breakdown voltage of corresponding CMOS on the same semiconductor process. The measured PA results were used to validate the model across different bias and input power level conditions.

Original languageEnglish (US)
Title of host publication2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Digest of Papers
Number of pages4
StatePublished - Sep 28 2012
Event2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012 - Montreal, QC, Canada
Duration: Jun 17 2012Jun 19 2012

Publication series

NameDigest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
ISSN (Print)1529-2517


Other2012 IEEE Radio Frequency Integrated Circuits Symposium, RFIC 2012
CityMontreal, QC


  • power amplifiers
  • semiconductor device modeling
  • silicon-on-insulator technology

ASJC Scopus subject areas

  • General Engineering


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