Characterization and comparison of silicon nitride films deposited using two novel processes

Vivek Sharma, Adam Bailey, Bill Dauksher, Clarence Tracy, Stuart Bowden, Barry O'Brien

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Hydrogenated silicon nitride films (SiN x:H) deposited using a PECVD process enhance the performance of crystalline silicon solar cells by functioning as an efficient anti-reflection coating and passivating layer. In this paper, we compared two novel SiN x:H deposition processes using two different PECVD tools - one non-traditional in process regime, and the other non-traditional in type, to determine their suitability to solar cell fabrication. The parameter space was explored by employing a design of experiment methodology followed by material characterization using VASE, reflectance, FTIR and RBS/ERD. The thickness and reflectance of Si-rich films changed dramatically after annealing. Further, FTIR results showed that the Si-H bond peak present at 2160 cm -1 in such films disappeared after a typical Al firing step. Therefore, the optimized films were deposited with a lower SiH 4/NH 3 ratio to minimize the changes in the film properties after annealing.

Original languageEnglish (US)
Title of host publicationProgram - 37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Number of pages6
StatePublished - Dec 1 2011
Event37th IEEE Photovoltaic Specialists Conference, PVSC 2011 - Seattle, WA, United States
Duration: Jun 19 2011Jun 24 2011

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371


Other37th IEEE Photovoltaic Specialists Conference, PVSC 2011
Country/TerritoryUnited States
CitySeattle, WA

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering


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