Changes in band alignment during annealing at 600 °c of ALD Al2O3 on (InxGa1 - X)2O3 for x = 0.25-0.74

Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton

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6 Scopus citations


Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 - x)2O3 (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In0.25Ga0.75)2O3 to -1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.

Original languageEnglish (US)
Article number105701
JournalJournal of Applied Physics
Issue number10
StatePublished - Mar 14 2020

ASJC Scopus subject areas

  • General Physics and Astronomy


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