Changes in band alignment during annealing at 600 °c of ALD Al2O3 on (InxGa1 - X)2O3 for x = 0.25-0.74

Chaker Fares; Minghan Xian; David J. Smith; Martha R. McCartney; Max Kneiß; Holger Von Wenckstern; Marius Grundmann; Marko Tadjer; Fan Ren; S. J. Pearton

doi:10.1063/5.0002875

Changes in band alignment during annealing at 600 °c of ALD Al₂O₃ on (In_xGa_{1 - X})₂O₃ for x = 0.25-0.74

Chaker Fares, Minghan Xian, David J. Smith, Martha R. McCartney, Max Kneiß, Holger Von Wenckstern, Marius Grundmann, Marko Tadjer, Fan Ren, S. J. Pearton

Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al₂O₃ on (In_xGa_{1 - x})₂O₃ (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In_0.25Ga_0.75)₂O₃ to -1.28 eV for (In_0.74Ga_0.26)₂O₃ and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In_0.74Ga_0.26)₂O₃ sample.

Original language	English (US)
Article number	105701
Journal	Journal of Applied Physics
Volume	127
Issue number	10
DOIs	https://doi.org/10.1063/5.0002875
State	Published - Mar 14 2020

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General Physics and Astronomy

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@article{9d2b0e3b3c284eb2b134832c1927c74b,

title = "Changes in band alignment during annealing at 600 °c of ALD Al2O3 on (InxGa1 - X)2O3 for x = 0.25-0.74",

abstract = "Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 - x)2O3 (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In0.25Ga0.75)2O3 to -1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.",

author = "Chaker Fares and Minghan Xian and Smith, {David J.} and McCartney, {Martha R.} and Max Knei{\ss} and {Von Wenckstern}, Holger and Marius Grundmann and Marko Tadjer and Fan Ren and Pearton, {S. J.}",

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doi = "10.1063/5.0002875",

language = "English (US)",

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T1 - Changes in band alignment during annealing at 600 °c of ALD Al2O3 on (InxGa1 - X)2O3 for x = 0.25-0.74

AU - Fares, Chaker

AU - Xian, Minghan

AU - Smith, David J.

AU - McCartney, Martha R.

AU - Kneiß, Max

AU - Von Wenckstern, Holger

AU - Grundmann, Marius

AU - Tadjer, Marko

AU - Ren, Fan

AU - Pearton, S. J.

PY - 2020/3/14

Y1 - 2020/3/14

N2 - Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 - x)2O3 (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In0.25Ga0.75)2O3 to -1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.

AB - Changes in valence band offsets (VBOs) as a result of annealing of heterostructures of atomic layer deposited Al2O3 on (InxGa1 - x)2O3 (where x = 0.25-0.75), grown by pulsed laser deposition, are reported. The heterostructures have been annealed at 600 °C to simulate the expected thermal budget during device fabrication. The VBOs decrease significantly as a result of annealing, with the change being larger at higher indium concentrations. The decrease in VBO ranges from -0.38 eV for (In0.25Ga0.75)2O3 to -1.28 eV for (In0.74Ga0.26)2O3 and is likely due to increased interfacial disorder at the heterointerface as well as phase differences between gallium-rich samples and indium-rich samples. After annealing, the band alignment remains type I (nested gap) for x = 0.25, 42, and 60 but becomes type II for the (In0.74Ga0.26)2O3 sample.

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Changes in band alignment during annealing at 600 °c of ALD Al₂O₃ on (In_xGa_{1 - X})₂O₃ for x = 0.25-0.74

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