TY - JOUR
T1 - Cellular Monte Carlo simulation of high field transport in semiconductor devices
AU - Goodnick, Stephen
AU - Saraniti, Marco
N1 - Funding Information:
The authors would like to thank the various persons who helped contribute to this work, including S. Aboud, J. Ayubi-Moak, S. Beysserie, J. Branlard, D. K. Ferry, and S. Yamakawa. The authors would also like to thank the support of the National Science Foundation and the DoD High Performance Computing Modernization Program.
PY - 2007/9
Y1 - 2007/9
N2 - Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. As a particular example, this method is applied to study high field transport in GaN and GaN/AlGaN heterostructures, where good agreement is obtained between the simulated results, and experimental pulse I-V measurements of transport. For device simulation, the CMC algorithm is coupled to an efficient 2D/3D multi-grid Poisson solver. We discuss the application of this algorithm to several technological problems of interest, including ultra-short channel Si/Ge MOSFETs, III-V compound HEMTs, and AlGaN/GaN HEMTs.
AB - Here we discuss the use of the Cellular Monte Carlo (CMC) method for full band simulation of semiconductor transport and device modeling. The electronic band structure and phonon spectra are used as direct inputs to the program for both cubic, hexagonal, and strained crystal structures using both empirical and ab initio methods. As a particular example, this method is applied to study high field transport in GaN and GaN/AlGaN heterostructures, where good agreement is obtained between the simulated results, and experimental pulse I-V measurements of transport. For device simulation, the CMC algorithm is coupled to an efficient 2D/3D multi-grid Poisson solver. We discuss the application of this algorithm to several technological problems of interest, including ultra-short channel Si/Ge MOSFETs, III-V compound HEMTs, and AlGaN/GaN HEMTs.
KW - Monte Carlo
KW - Semiconductors
KW - Transport
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U2 - 10.1142/S0129156407004655
DO - 10.1142/S0129156407004655
M3 - Article
AN - SCOPUS:41149180228
SN - 0129-1564
VL - 17
SP - 465
EP - 473
JO - International Journal of High Speed Electronics and Systems
JF - International Journal of High Speed Electronics and Systems
IS - 3
ER -