@inproceedings{c0ff5d45297e4ff88678e31fc5a02ad8,
title = "Cascode MOSFET-MESFET RF power amplifier on 150nm SOI CMOS technology",
abstract = "Metal-semiconductor-field-effect-transistors (MESFETs) have been fabricated using a 150 nm partially depleted silicon-on-insulator CMOS technology. A peak f T of 40 GHz and peak breakdown voltages of up to 12V were measured. Comparatively, the CMOS transistors on the same process have a maximum steady-state voltage limit of 1.95V. TOM3 model for MESFET developed in ADS. The demonstrated high cut-off frequency and high voltage operation capability make the SOI MESFET a good device candidate for integrated radio frequency (RF) power amplifiers (PA). A cascoded MOS-MES RF PA architecture is proposed and simulated in ADS using the TOM3 model. Simulation results show 75% PAE while delivering 24dBm output power.",
keywords = "MESFETs, Power Amplifiers (PA), silicon-on-insulator (SOI)",
author = "Ghajar, {M. Reza} and William Lepkowski and Seth Wilk and Bertan Bakkaloglu and Slim Boumaiza and Trevor Thornton",
year = "2011",
month = dec,
day = "1",
language = "English (US)",
isbn = "9782874870231",
series = "European Microwave Week 2011: {"}Wave to the Future{"}, EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011",
pages = "316--319",
booktitle = "European Microwave Week 2011",
note = "14th European Microwave Week 2011: {"}Wave to the Future{"}, EuMW 2011 - 6th European Microwave Integrated Circuit Conference, EuMIC 2011 ; Conference date: 10-10-2011 Through 11-10-2011",
}