Abstract
The phonon-assisted emission of GaAs 1 xBi x quantum wells with Bi concentrations up to x=0.055 is investigated by continuous-wave photoluminescence as a function of lattice temperature and excitation density. Strong carrier-phonon coupling is observed manifesting itself in a Huang-Rhys factor of up to 0.3 depending on the lattice temperature and Bi content. Carriers bound to Bi-clusters are identified to be the origin of the efficient carrier-phonon scattering.
Original language | English (US) |
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Article number | 085012 |
Journal | Semiconductor Science and Technology |
Volume | 27 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2012 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry