Calculation of the Auger line at the Si/SiO2 interface

T. Kunjunny; D. K. Ferry

doi:10.1063/1.91753

Calculation of the Auger line at the Si/SiO₂ interface

T. Kunjunny, D. K. Ferry

Arizona State University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The Auger line shape has been calculated for the surface of (100) silicon, using a semiempirical tight-binding slab model. Chemisorbed oxygen was considered by having the oxygen atom (or molecule) satisfy the double dangling bond of the surface atoms. The presence of the chemisorbed oxygen caused a shift of the outer-layer local density of states in such a manner to create additional structure in the N(E) distribution for the Auger transition. This structure correlates well with such structure reported recently by several experimental groups.

Original language	English (US)
Pages (from-to)	1031-1032
Number of pages	2
Journal	Applied Physics Letters
Volume	37
Issue number	11
DOIs	https://doi.org/10.1063/1.91753
State	Published - 1980

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.91753

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AB - The Auger line shape has been calculated for the surface of (100) silicon, using a semiempirical tight-binding slab model. Chemisorbed oxygen was considered by having the oxygen atom (or molecule) satisfy the double dangling bond of the surface atoms. The presence of the chemisorbed oxygen caused a shift of the outer-layer local density of states in such a manner to create additional structure in the N(E) distribution for the Auger transition. This structure correlates well with such structure reported recently by several experimental groups.

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Calculation of the Auger line at the Si/SiO₂ interface

Abstract

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